| 快速热处理对重掺As硅单晶中氧沉淀的影响 |
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| 引用本文： | 孙世龙,刘彩池,郝秋艳,滕晓云,赵丽伟,赵彦桥,王立建,石义情.快速热处理对重掺As硅单晶中氧沉淀的影响[J].半导体学报,2006,27(13):165-168. |
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| 作者姓名： | 孙世龙 刘彩池 郝秋艳 滕晓云 赵丽伟 赵彦桥 王立建 石义情 |
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| 作者单位： | 河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130;河北工业大学信息功能材料研究所，天津 300130 |
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| 摘 要： | 对重掺As硅片进行快速热处理，发现重掺As硅片中氧沉淀行为与快速热处理温度、保温时间和降温速度有很大的关系. 随着快速热处理温度的升高、降温速度的增大和保温时间的延长，氧沉淀的密度增大. 最后对影响的机理进行了讨论.
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| 关 键 词： | 重掺As硅片 快速热处理 氧沉淀 清洁区 |
Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer |
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| Sun Shilong,Liu Caichi,Hao Qiuyan,Teng Xiaoyun,Zhao Liwei,Zhao Yanqiao,Wang Lijian and Shi Yiqing.Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J].Chinese Journal of Semiconductors,2006,27(13):165-168. |
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| Authors: | Sun Shilong Liu Caichi Hao Qiuyan Teng Xiaoyun Zhao Liwei Zhao Yanqiao Wang Lijian and Shi Yiqing |
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| Affiliation: | Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China;Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China |
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| Abstract: | Rapid thermal process (RTP) is performed to heavily-As doped silicon wafer.It is found that the density of oxygen precipitates increases slowly with the increase of the RTP temperature,the cooling rate, and the RTP time. |
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| Keywords: | :heavily-As doped silicon wafer RTP oxygen precipitates denuded zone |
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