| 高亮度AlGaInP红光发光二极管 |
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| 引用本文： | 韩军,李建军,邓军,邢艳辉,于晓东,林委之,刘莹,沈光地. 高亮度AlGaInP红光发光二极管[J]. 光电子．激光, 2008, 19(2) |
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| 作者姓名： | 韩军 李建军 邓军 邢艳辉 于晓东 林委之 刘莹 沈光地 |
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| 作者单位： | 北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022;北京工业大学,北京市光电子技术实验室,北京,100022 |
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| 摘 要： | 对用于提高AlGaInP红光发光二极管(LED)出光效率的分布布拉格反射镜(DBR)和增透膜进行了分析,用金属有机物化学气相沉积(MOCVD)生长了包含DBR和增透膜的LED,在20 mA注入电流下,LED的峰值波长为623 nm,光强达到200 mcd,输出光功率为2.14 mW.与常规的LED相比,光强和输出光功率有很大的提高.
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| 关 键 词： | 红光发光二极管(LED) 分布布拉格反射镜(DBR) 增透膜 金属有机物化学气相沉积(MOCVD) |
High bright AlGaInP red light LED |
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| HAN Jun,LI Jian-jun,DENG Jun,XING Yan-hui,YU Xiao-dong,LIN Wei-zhi,LIU Ying,SHEN Guang-di. High bright AlGaInP red light LED[J]. Journal of Optoelectronics·laser, 2008, 19(2) |
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| Authors: | HAN Jun LI Jian-jun DENG Jun XING Yan-hui YU Xiao-dong LIN Wei-zhi LIU Ying SHEN Guang-di |
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| Affiliation: | HAN Jun,LI Jian-jun,DENG Jun,XING Yan-hui,YU Xiao-dong,LIN Wei-zhi,LIU Ying,SHEN Guang-di(Beijing Optoelectronic Technology Lab.Beijing University ofTechnology,Beijing 100022,China) |
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| Abstract: | The distributed Bragg reflector(DBR) and the enhanced transmission film are analyzed,which are used to increase the light extraction efficiency in AlGaInP red light light emitting diodes(LED).The LED with DBR and enhanced transmission film was grown by MOCVD.At 20 mA Dc injection current,the LED peak wave length was 623 nm,the light intensity was 200 mcd,and the output light power was 2.14 mW.The light intensity and Output light power were improved better than that of traditional LED. |
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| Keywords: | red light emitting diodes(LED) distributed Bragg reflector(DBR) enhanced transmission film MOCVD |
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