Liquid phase epitaxy of Ge1?x
Snx semiconductor films |
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| Authors: | A S Saidov A Sh Razzakov É A Koshchanov |
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| Affiliation: | (1) Physical Engineering Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan |
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| Abstract: | Epitaxial layers of Ge1?x Snx semiconductor solid solutions on germanium substrates were grown from a limited volume of a tin-based solution melt in a temperature interval from 740 to 450°C. Optimum conditions favoring the growth of crystallographically perfect epitaxial films were established based on the results of the X-ray diffraction and morphological study of the samples. |
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