| 内置驱动器的六位GaAs PHEMT宽带单片数控衰减器 |
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| 引用本文： | 李娜,许正荣,李晓鹏,陈新宇. 内置驱动器的六位GaAs PHEMT宽带单片数控衰减器[J]. 固体电子学研究与进展, 2010, 30(1) |
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| 作者姓名： | 李娜 许正荣 李晓鹏 陈新宇 |
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| 作者单位： | 南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016;南京电子器件研究所,南京,210016 |
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| 摘 要： | 采用增强/耗尽型(E/D)结构的赝配高电子迁移率晶体管(PHEMT)技术,研制开发的砷化镓MMIC单片六位数字控制衰减器,具有衰减精度准确、承受功率大、线性度高等特点,并且集成了驱动器,使得输入信号控制线减少了一半,大大减少了系统布线的难度。产品由GaAsPHEMT标准工艺线加工。测试结果表明,在0.05～3.0GHz带内,插入损耗≤2.3dB@3GHz,带内输入输出驻波比≤1.5,衰减精度在±(0.3dB+3%)以内,1dB压缩功率点达到了27dBm,IP3超过了+45dBm。
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| 关 键 词： | 砷化镓 数控衰减器 增强型 耗尽型 赝配高电子迁移率晶体管 |
Six bit GaAs PHEMT Broad Band Digital Attenuator MMIC Comprising TTL Driver |
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| LI Na,XU Zhengrong,LI Xiaopeng,CHEN Xinyu. Six bit GaAs PHEMT Broad Band Digital Attenuator MMIC Comprising TTL Driver[J]. Research & Progress of Solid State Electronics, 2010, 30(1) |
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| Authors: | LI Na XU Zhengrong LI Xiaopeng CHEN Xinyu |
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| Abstract: | GaAs MMIC 6 bit digital attenuator product has been designed using new PHEMT technology including enhancement/depletion FET.This product makes a feature of accurate at-tenuation,high linearity,high power capability,and integrates inverter driver,on the other hand it can halve quantity of control lines and simplify layout of communication systems.This product is fabricated by GaAs PHEMT standard foundry.The measurement results are as follows in 0.05～3.0 GHz frequency range,insertion loss≤2.3 dB@3GHz,VSWR≤1.5,attenuation accuracy ≤±(0.3 dB+3%),P-1≥27 dBm,IP3≥+45 dBm. |
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| Keywords: | GaAs digital attenuator enhancement depletion PHEMTEEACC 1200 2560 |
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