High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates |
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| Authors: | S. S. Mikhrin A. E. Zhukov A. R. Kovsh N. A. Maleev A. P. Vasil’ev E. S. Semenova V. M. Ustinov M. M. Kulagina E. V. Nikitina I. P. Soshnikov Yu. M. Shernyakov D. A. Livshits N. V. Kryjanovskaya D. S. Sizov M. V. Maksimov A. F. Tsatsul’nikov N. N. Ledentsov D. Bimberg Zh. I. Alferov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) Technical University of Berlin, D-10623 Berlin, Germany |
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| Abstract: | Diode lasers based on several layers of self-organized quantum dots (QD) on GaAs substrates were studied. The lasing wavelength lies in the range λ=1.25–1.29 μm, depending on the number of QD layers and optical losses. A record external differential efficiency of 88% and the characteristic temperature of threshold current, 145 K, were obtained. The internal losses, and also threshold and spectral characteristics, are correlated with the optical gain and radiative recombination efficiency, which are strongly dependent on the design of the active region and growth modes. |
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