| 功率LDMOS中的场极板设计 |
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| 引用本文： | 肖小虎,高珊,陈军宁,柯导明.功率LDMOS中的场极板设计[J].电子技术,2010,47(5):79-81. |
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| 作者姓名： | 肖小虎 高珊 陈军宁 柯导明 |
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| 作者单位： | 安徽大学电子科学与技术学院 |
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| 基金项目： | 1)国家自然科学基金资助项目"复合多晶硅栅射频高增益MOSFET的研究"(60876062)2)省级实验室项目:基于栅工程的射频功率LDMOS的设计与研究 |
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| 摘 要： | 本文提出了LDMOS器件漂移区电场分布和电势分布的二维解析模型,并在此基础上得出了LDMOS漂移区电势分布和电场分布的解析表达式。通过表达式的结果,研究了多晶硅场板的长度和位置对于器件表面电场和电势的影响,解析结果与MEDICI结果相符。
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| 关 键 词： | 横向扩散金属氧化物半导体 多晶硅场板 表面电场 表面电势 |
The Design of Field Plate in Power LDMOS |
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| Xiao Xiaohu,Gao Shan,Chen Junning,Ke Daoming.The Design of Field Plate in Power LDMOS[J].Electronic Technology,2010,47(5):79-81. |
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| Authors: | Xiao Xiaohu Gao Shan Chen Junning Ke Daoming |
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| Affiliation: | Xiao Xiaohu Gao Shan Chen Junning Ke Daoming(School of Electronic Science and Technology,Anhui University) |
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| Abstract: | In this paper, a 2-D analytical model for the surface potential and electric field distribution along the drift region of LDMOS is presented, and in this basis the analytical expressions for the surface potential and electric field distribution along the drift region of LDMOS are obtained. The model gives the influence of the length and position of polysilicon field-plate on the surface potential and electric field distributions of the LDMOS. The analytical results are well corresponded with the simulation ... |
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| Keywords: | LDMOS polysilicon field-plate Surface potential Surface electrical field |
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