| SOI NMOSFET沟道热载流子的应力损伤 |
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| 引用本文： | 郝跃,朱建纲,郭林,张正幡.SOI NMOSFET沟道热载流子的应力损伤[J].半导体学报,2001,22(4). |
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| 作者姓名： | 郝跃 朱建纲 郭林 张正幡 |
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| 作者单位： | 1. 西安电子科技大学微电子研究所,
2. 四川固体电路研究所, |
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| 摘 要： | 研究了沟道热载流子应力所引起的SOI NMOSFET的损伤．发现在中栅压应力（Vg≈Vd／2）和高栅压应力（Vg≈Vd）条件下，器件损伤表现出单一的幂律规律；而在低栅压应力（Vgs≈Vth）下，多特性的退化规律便会表现出来．同时，应力漏电压的升高、应力时间的延续都会导致退化特性的改变．这使预测SOI器件的寿命变得非常困难．
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| 关 键 词： | SIMOX SOI PBT 热载流子 阈值电压 |
Degradation Induced by Channel Hot-Carriers Effect in SOI NMOSFET's |
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| HAO Yue,ZHU Jian-gang,GUO Lin,ZHANG Zheng-fan.Degradation Induced by Channel Hot-Carriers Effect in SOI NMOSFET's[J].Chinese Journal of Semiconductors,2001,22(4). |
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| Authors: | HAO Yue ZHU Jian-gang GUO Lin ZHANG Zheng-fan |
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| Abstract: | The degradation induced by channel hot-carriers effect in SOI NMOSFET,namely SIMOX structure,is investigated.At moderate or high gate voltage stress,the single-power law degradation is shown；but at a low gate voltage bias it is multi-behavioral parameter degradation that is found,so it is very difficult to predict the SOI MOSFET's age. |
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