| 采用TEOS和H2O源PECVD方法生长氧化硅厚膜 |
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| 引用本文： | 雷红兵,王红杰,邓晓清,杨沁清,胡雄伟,王启明,廖左升,杨基南. 采用TEOS和H2O源PECVD方法生长氧化硅厚膜[J]. 半导体学报, 2001, 22(5) |
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| 作者姓名： | 雷红兵 王红杰 邓晓清 杨沁清 胡雄伟 王启明 廖左升 杨基南 |
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| 作者单位： | 1. 中国科学院半导体研究所,
2. 信息产业部电子48所, |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 开展了使用TEOS和H2O混合物进行PECVD生长SiO2膜的研究工作.氧化硅折射率分布在1.453±0.001的范围，且随偏离中心距离基本不变.薄膜厚度是中央大，边沿薄，其厚度相对变化不超过±1.5％（51mm衬底).利用TEOS源PECVD，并结合退火技术，摸索出厚膜氧化硅生长工艺，已成功地在硅衬底上生长出厚度超过15μm氧化硅厚膜，可用于制备氧化硅平面波导器件.
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| 关 键 词： | 二氧化硅 PECVD 平面波导 |
Deposition of Thick SiO2 from Tetraethylorthosilicate and H2O by Plasma-Enhanced CVD |
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| LEI Hong-bing,WANG Hong-jie,DENG Xiao-qing,YANG Qin-qing,HU Xiong-wei,WANG Qi-ming,LIAO Zuo-sheng,YANG Ji-nan. Deposition of Thick SiO2 from Tetraethylorthosilicate and H2O by Plasma-Enhanced CVD[J]. Chinese Journal of Semiconductors, 2001, 22(5) |
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| Authors: | LEI Hong-bing WANG Hong-jie DENG Xiao-qing YANG Qin-qing HU Xiong-wei WANG Qi-ming LIAO Zuo-sheng YANG Ji-nan |
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| Abstract: | The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H2O has been studied.Silicon oxide with refractive index of 1.453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±1.5% and constant refractive index of 1.453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing. |
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