HV/CVD系统Si、SiGe低温掺杂外延

研究了硼烷（B2H6）掺杂锗硅外延和磷烷（PH3）掺杂硅外延的外延速率和掺杂浓度与掺杂气体流量的关系．B浓度与B2H6流量基本上成正比例关系；生长了B浓度直至1019cm-3的多层阶梯结构，各层掺杂浓度均匀，过渡区约20nm，在整个外延层，Ge组分（x=0.20）均匀而稳定．PH3掺杂外延速率随PH3流量增加而逐渐下降；P浓度在PH3流量约为1.7sccm时达到了峰值（约6×1018cm-3）．分别按PH3流量递增和递减的顺序生长了多层结构用以研究PH3掺杂Si外延的特殊性质．

Low Temperature Silicon and Silicon Germanium Doping Epitaxy by HV/CVD

Growth rate and doping concentration，as a function of the flow of doping gases of B2H6-doped SiGe epitaxy and PH3-doped Si epitaxy，have been studied.B concentration is basically proportional to the flow of B2H6.Si0.8Ge0.2 multi-layer films doped with B concentration up to 1019cm-3 have been grown and sharp doping transitions have been obtained,The Ge composition (x=0.20) is stable and flat throughout the entire epi-layer.Growth rate of PH3-doped Si epitaxy decreases with the flow of PH3　and P concentration can reach a peak value of about 6×1018cm-3 when the flow of PH3 is near 1.7sccm.Si multi-layer films with increased and decreased sequence of the flow of PH3 have also been grown respectively to investigate the special characteristics of PH3-doping silicon epitaxy.