微波晶体管散射矩阵的数值计算

提出了一种计算半导体器件散射矩阵的方法，该方法采用数值分析技术，把描述有源半导体器件的泊松方程和电流连续性方程与描述输入输出匹配网络的电报方程联立求解，得到了晶体管端点电压和端点电流随时间的变化关系，根据电压电流值求出器件的散射矩阵.在设计微波单片集成电路(MMIC)时，可以同时对器件和输入输出匹配电路进行设计，缩短了研制周期.另外计算了SOI MOSFET微波器件的散射矩阵．结果表明，该方法与传统的参数提取方法相比，两者的结果基本一致．

Numerical Algorithm of Scatter Parameters of Microwave Transistor

The maturation of low-cost silicon-on-insulation (SOI) MOSFET technology in the microwave domain has brought about a need to develop the specific characterization.The paper presents a method of abstaining from the scatter parameters of SOI MOSFET by resolving the Poisson equation,current equations and the telegraph equations of transmission lines of the input/output match networks.A numerical algorithm is used for the equation resolution.The input/output match circuits of MMIC can be designed and fabricated together with its active transistor,so that it shotens the fabrication period compared with the method of parameter abstraction when MMIC being developed.The numerical algorithm on the SOI MOSFET's scatter parameters has been carried out.It shows that the result from this method is identical with that from the parameter abstraction.