槽栅MOS控制的晶闸管

报道了一种新结构的功率栅控晶闸管，称其为槽栅MOS控制的晶闸管（TMCT）.在该器件结构中，采用UMOS控制晶闸管的开启和关闭.结构中不存在任何的寄生器件，因此，消除了在其它结构的栅控晶闸管中由寄生晶体管引起的各种问题，所以TMCT会有优良的电特性.实验结果表明，多元胞TMCT（600V，有源区面积0.2mm2）的开态压降在300A/cm2时为1.25V，最大可控电流在栅压为-20V和电感负载下达到了296A/cm2.

Trench MOS Controlled Thyristor

A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 0.2mm2 show that the on-state drop is 1.25V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load.