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离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导
引用本文:马慧莲,杨建义,江晓清,王明华.离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导[J].半导体学报,2001,22(4).
作者姓名:马慧莲  杨建义  江晓清  王明华
作者单位:浙江大学信息与电子工程学系,
基金项目:国家自然科学基金,国家重点基础研究发展计划(973计划)
摘    要:采用离散谱折射率法对深刻蚀GaAs/GaAlAs多层脊形光波导的特性作了详细的理论分析,并对所获得的较大截面、低损耗的单模脊形光波导的制作容差性作了进一步的分析.计算表明,用离散谱折射率法获得的单模脊形光波导具有较大的制作容差性.

关 键 词:离散谱折射率法  深刻蚀  GaAs/GaAlAs

Optimization of Deep-Etched,Single-Mode GaAs/GaAlAs Optical Rib Waveguides Using Discrete Spectral Index Method
MA Hui-lian,YANG Jian-yi,JIANG Xiao-qing,WANG Ming-hua.Optimization of Deep-Etched,Single-Mode GaAs/GaAlAs Optical Rib Waveguides Using Discrete Spectral Index Method[J].Chinese Journal of Semiconductors,2001,22(4).
Authors:MA Hui-lian  YANG Jian-yi  JIANG Xiao-qing  WANG Ming-hua
Abstract:A more detailed analysis of deep-etched,single-mode GaAs/GaAlAs multiple-layer optical rib waveguides is presented using the discrete spectral index method (DSIM).The fabrication tolerance of the obtained low-loss,single-mode optical rib waveguides with a large mode size is analysed as well.The result indicates that single-mode rib waveguides obtained by this method have large fabrication tolerance.
Keywords:
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