| 两种集成高频CMOS多谐压控振荡器 |
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| 引用本文： | 张春晖,李永明,陈弘毅. 两种集成高频CMOS多谐压控振荡器[J]. 半导体学报, 2001, 22(4) |
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| 作者姓名： | 张春晖 李永明 陈弘毅 |
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| 作者单位： | 清华大学微电子学研究所, |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出了两种压控振荡器，一种为差分形式，另一种为压控环结构．采用CSMC公司0.6μm标准CMOS工艺进行模拟，后仿真的结果显示，压控环结构的最高频率达到2GHz，在5V电源下的功耗为7.5mW．对压控振荡器的实现方法进行了分析比较，总结了高性能压控振荡器应具备的条件，并讨论了特定工艺下压控振荡器的极限频率．
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| 关 键 词： | 琐相环 CMOS振荡器 相位噪声 特征尺寸 |
Two Types of High Frequency Integrated CMOS Multivibrator Voltage-Controlled Oscillator |
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| ZHANG Chun-hui,LI Yong-ming,CHEN hong-yi. Two Types of High Frequency Integrated CMOS Multivibrator Voltage-Controlled Oscillator[J]. Chinese Journal of Semiconductors, 2001, 22(4) |
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| Authors: | ZHANG Chun-hui LI Yong-ming CHEN hong-yi |
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| Abstract: | Two types of Voltage-Controlled Oscillator (VCO) circuits,a differential oscillator and a simple ring one are described.Simulated in a 0.6μm CMOS technology offered by CSMC Company,the result of postsimulation exhibits that the maximum frequency of the simple ring VCO is more than 2GHz and 7.5mW power consumption (at supply voltage of 5V).The limitation of the maximum VCO frequency in specific technology is also discussed. |
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