| SOI MOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移 |
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| 引用本文： | 万新恒,张兴,黄如,甘学温,王阳元.SOI MOSFET因辐照引起的部分耗尽与全耗尽过渡区的漂移[J].半导体学报,2001,22(3). |
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| 作者姓名： | 万新恒 张兴 黄如 甘学温 王阳元 |
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| 作者单位： | 北京大学微电子学研究所, |
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| 摘 要： | 首次报道了辐照所引起的SOI/MOS器件PD(部分耗尽) 与FD(全耗尽) 过渡区的漂移．基于含总剂量辐照效应的SOI MOSFET统一模型，模拟了FD与PD过渡区随辐照剂量的漂移．讨论了辐照引起FD与PD器件转化的原因，进一步分析了FD与PD器件的辐照效应．
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| 关 键 词： | SOI MOSFET 辐照特性 |
Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation |
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| WAN Xin-heng,ZHANG Xing,HUANG Ru,GAN Xue-wen,WANG Yang-Yuan.Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation[J].Chinese Journal of Semiconductors,2001,22(3). |
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| Authors: | WAN Xin-heng ZHANG Xing HUANG Ru GAN Xue-wen WANG Yang-Yuan |
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| Abstract: | The shift of transitions between partially and fully-depleted behavior in SOI MOSFET due to the radiation is first reported.Based on the derived fully continuous compact SOI MOSFET model，including the total dose effects,the shift of transitions between partially and fully-depleted behavior due to the radiation is simulated.Furthermore,the total dose ionizing effects of the partially and fully-depleted SOI MOSFETs are briefly discussed. |
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