| S波段0.3W AlGaAs/GaAs HBT功率管 |
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| 引用本文： | 严北平,张鹤鸣,戴显英. S波段0.3W AlGaAs/GaAs HBT功率管[J]. 半导体学报, 2001, 22(3) |
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| 作者姓名： | 严北平 张鹤鸣 戴显英 |
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| 作者单位： | 西安电子科技大学微电子学研究所, |
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| 摘 要： | 采用标准的湿法刻蚀工艺研制出了S波段工作的非自对准AlGaAs/GaAs异质结双极晶体管．对于总面积为8×2μm×10μm的HBT器件，测得其直流电流增益大于10，电流增益截止频率fT大于20GHz，最高振荡频率fmax大于30GHz．连续波功率输出为0.3W，峰值功率附加效率41％．
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| 关 键 词： | AlGaAs/GaAs异质结双极晶体管 功率特性 S波段 |
S-Band 0.3W AlGaAs/GaAs HBT for Power Application |
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| YAN Bei-ping,Zhang He-Ming,Dai Xian-Ying. S-Band 0.3W AlGaAs/GaAs HBT for Power Application[J]. Chinese Journal of Semiconductors, 2001, 22(3) |
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| Authors: | YAN Bei-ping Zhang He-Ming Dai Xian-Ying |
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| Abstract: | 0.3W S-band AlGaAs/GaAs HBTs for power application have been successfully fabricated with non self-aligned process and wet etching technology.For the device size of 8×2μm×10μm,DC current gain is more than 10,current gain cutoff frequency,fT,is more than 20GHz and the maximum oscillation frequency,fmax,is more than 30GHz.The CW power output of 0.3W and the power added efficiency of 41% is demonstrated at S-band (5GHz). |
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