| InGaN光致发光性质与温度的关系 |
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| 引用本文： | 樊志军,刘祥林,万寿科,王占国.InGaN光致发光性质与温度的关系[J].半导体学报,2001,22(5). |
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| 作者姓名： | 樊志军 刘祥林 万寿科 王占国 |
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| 作者单位： | 中国科学院半导体研究所 |
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| 摘 要： | 分析了用金属有机物气相外延方法(MOVPE)在蓝宝石衬底上生长的铟镓氮(InGaN)的光致发光(PL)性质.发现在4.7K至300K范围内，随着温度升高，InGaN带边辐射向低能方向移动，峰值变化基本符合Varshni经验公式；同时InGaN发光强度虽有所衰减，但比GaN衰减程度小，分析了导致GaN和InGaN光致发光减弱的可能因素.
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| 关 键 词： | InGaN 变温 光致发光 |
Dependence of InGaN Photoluminescence on Temperature |
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| FAN Zhi-jun,LIU Xiang-lin,WAN Shou-ke,WANG Zhan-guo.Dependence of InGaN Photoluminescence on Temperature[J].Chinese Journal of Semiconductors,2001,22(5). |
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| Authors: | FAN Zhi-jun LIU Xiang-lin WAN Shou-ke WANG Zhan-guo |
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| Abstract: | The properties of photoluminescence (PL) of InGaN grown by metalorganic vapor phase epitaxy have been studied.It is found that the near-band-gap radiation wavelength shifts to the lower energy when the temperature increasing from 4.7K to 300K.The red-shift accords with the Varshni’s empirical equation on the whole.The temperature quenching has also been observed in the PL of InGaN,though it is much less than that of GaN.The possible reason that causes the quenching has been analyzed. |
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