Spin injection from ferromagnetic semiconductor CoZnO into ZnO |
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Authors: | Gang JI Shishen YAN Yanxue CHEN Qiang CAO Wei XIA Yihua LIU Liangmo MEI Ze ZHANG |
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Affiliation: | Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China... |
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Abstract: | 2×(FeNi/CoZnO)/ZnO/(CoZnO/Co)×2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2×(FeNi/CoZnO) and (CoZnO/Co)×2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-inJection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature. |
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Keywords: | Spin injection Magnetoresistance Ferromagnetic semiconductor |
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