| 总剂量辐照SiO2/6H-SiC引起的界面势垒变化 |
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| 引用本文： | 牟维兵,龚敏,曹群.总剂量辐照SiO2/6H-SiC引起的界面势垒变化[J].半导体光电,2011,32(1):74-76,79. |
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| 作者姓名： | 牟维兵 龚敏 曹群 |
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| 作者单位： | 中国工程物理研究院电子工程研究所,四川,绵阳,621900;四川大学物理科学与技术学院,成都,610064;四川大学物理科学与技术学院,成都,610064 |
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| 基金项目： | 教育部博士点基金项目(20060610008) |
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| 摘 要： | 辐照会引起MOS器件电介质氧化物与半导体界面势垒变化,影响其工作性能和可靠性。测量了n型6H-SiC MOS电容辐照105rad(Si)剂量前后的I-V曲线,通过Fowler-Nordheim(F-N)隧道电流拟合,得到了界面势垒的大小,辐照前的为2.596 eV,辐照后降为1.492eV。界面势垒变化主要是由辐照产生的界面态引起的。
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| 关 键 词： | 总剂量辐照 6H-SiC 界面势垒 Ⅰ-Ⅴ分析 |
Total Dose Radiation Induced Interface Barriers Changing of SiO2/61t-SiC Structure |
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| MU Weibing,GONG Min,CHAO Qun.Total Dose Radiation Induced Interface Barriers Changing of SiO2/61t-SiC Structure[J].Semiconductor Optoelectronics,2011,32(1):74-76,79. |
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| Authors: | MU Weibing GONG Min CHAO Qun |
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| Affiliation: | MU Weibing1,2,GONG Min1,CHAO Qun1(1.Institute of Electricity Engineering,CAEP,Mianyang 621900,CHN,2.School of Physical Science and Technology,Sichuan University,Chengdu 610064,CHN) |
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| Abstract: | The barrier between oxide and SiC interface would change due to irradiation.And operating characteristics would be affected.I-V curves of n-type 6H-SiC MOS capacitor before and after 105rad(Si) irradiation are measured.Interface barriers are calculated by Fowler-Nordheim tunneling fit.The barrier before irradiation is 2.446 eV,and that is 1.604 eV after irradiation.Shift of barrier is main due to acceptor type interface states produced by irradiation. |
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| Keywords: | total ionization irradiation 6H-SiC interface barrier I-V analyses |
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