| 使用自制MOCVD系统外延高质量GaN基LED材料 |
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| 引用本文： | 殷海波,王晓亮,冉军学,胡国新,张露,肖红领,李璟,李晋闽. 使用自制MOCVD系统外延高质量GaN基LED材料[J]. 半导体学报, 2011, 32(3): 033002-4 |
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| 作者姓名： | 殷海波 王晓亮 冉军学 胡国新 张露 肖红领 李璟 李晋闽 |
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| 作者单位： | Institute of Semiconductors;Chinese Academy of Sciences; |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China(No.2006AA03A141); the Knowledge Innovation Engineering of the Chinese Academy of Sciences(No.YYYJ-0701-02); the National Natural Science Foundation of China (Nos.60890193,60906006); the State Key Development Program for Basic Research of China(Nos.2006CB604905,2010CB327503); the Knowledge Innovation Program of the Chinese Academy of Sciences(Nos.ISCAS2008T01,ISCAS2009L01,ISCAS2009L02) |
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| 摘 要： | A homemade 7×2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers, blue LED chips with area of 350×350μm~2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.
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| 关 键 词： | MOCVD系统 蓝光LED 外延层生长 氮化镓 品质 光输出功率 氮化铟镓 使用面积 |
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system |
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| Yin Haibo,Wang Xiaoliang,Ran Junxue,Hu Guoxin,Zhang Lu,Xiao Hongling,Li Jing and Li Jinmin. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. Chinese Journal of Semiconductors, 2011, 32(3): 033002-4 |
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| Authors: | Yin Haibo Wang Xiaoliang Ran Junxue Hu Guoxin Zhang Lu Xiao Hongling Li Jing Li Jinmin |
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| Affiliation: | Yin Haibo,Wang Xiaoliang,Ran Junxue,Hu Guoxin,Zhang Lu,Xiao Hongling,Li Jing,and Li Jinmin Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | |
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| Keywords: | MOCVD GaN InGaN/GaN MQWs LED |
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