| 线性稳压器不同偏置下的低剂量率损伤增强效应 |
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| 引用本文： | 王义元,陆妩,任迪远,郭旗,余学峰,高博. 线性稳压器不同偏置下的低剂量率损伤增强效应[J]. 半导体学报, 2011, 32(3): 034007-4 |
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| 作者姓名： | 王义元 陆妩 任迪远 郭旗 余学峰 高博 |
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| 作者单位： | Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Graduate University of the Chinese Academy of Sciences; |
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| 摘 要： | A linear voltage regulator was irradiated by ~(60)Coγat high and low dose rates with two bias conditions to investigate the dose rate effect.The devices exhibit enhanced low dose rate sensitivity(ELDRS) under both biases. Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias conditions.This confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the max...
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| 关 键 词： | 线性稳压器 低剂量率 偏见 灵敏度 偏置条件 剂量率效应 误差放大器 结构相关 |
The enhanced low dose rate sensitivity of a linear voltage regulator with different biases |
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| Wang Yiyuan,Lu Wu,Ren Diyuan,Guo Qi,Yu Xuefeng and Gao Bo. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases[J]. Chinese Journal of Semiconductors, 2011, 32(3): 034007-4 |
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| Authors: | Wang Yiyuan Lu Wu Ren Diyuan Guo Qi Yu Xuefeng Gao Bo |
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| Affiliation: | Wang Yiyuan~(1,2,3),Lu Wu~(1,2),Ren Diyuan~(1,Guo Qi~(1,Yu Xuefeng~(1,and Gao Bo~(1,3) 1 Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,China 2 Xinjiang Key Laboratory of Electronic Information Materials and Devices,China 3 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China |
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| Abstract: | |
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| Keywords: | linear voltage regulator ELDRS bias dependence |
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