| Cu掺杂对sol-gel法制备的ZnO:Co薄膜发光特性的影响 |
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| 引用本文： | 段文倩,徐明,吴艳南,董成军,杜懋陆. Cu掺杂对sol-gel法制备的ZnO:Co薄膜发光特性的影响[J]. 半导体光电, 2011, 32(1) |
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| 作者姓名： | 段文倩 徐明 吴艳南 董成军 杜懋陆 |
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| 作者单位： | 西南民族大学电气信息工程学院&信息材料四川省重点实验室,成都,610041;西南民族大学电气信息工程学院&信息材料四川省重点实验室,成都,610041;四川师范大学物理与电子工程学院&固体物理研究所,成都,610068;四川师范大学物理与电子工程学院&固体物理研究所,成都,610068 |
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| 基金项目： | 四川省教育厅基金项目(2006C020) |
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| 摘 要： | 采用溶胶-凝胶法制备了Cu、Co共掺的Zn0.95-xCo0.05CuxO(x=0,0.01,0.03,0.05)薄膜,并用金相显微镜和X射线衍射(XRD)研究了样品薄膜的形貌和结构,结果发现掺杂量影响着衍射峰的强度和位置。测量了样品的室温光致发光谱(PL谱),所有样品均观察到紫外发光带和蓝光发光带,同时伴随有较弱的绿光发光带。微量Cu掺杂能够显著提高ZnO∶Co薄膜的发光强度,对样品的发光机制进行了讨论。
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| 关 键 词： | 溶胶-凝胶 Zn0.95-xCo0.05CuxO薄膜 光致发光 |
Effect of Cu Doping on the Photoluminescence of ZnO : Co Thin Films Prepared by sol-gel Method |
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| DUAN Wenqian,XU Ming,WU Yannan,DONG Chengjun,DU Maolu. Effect of Cu Doping on the Photoluminescence of ZnO : Co Thin Films Prepared by sol-gel Method[J]. Semiconductor Optoelectronics, 2011, 32(1) |
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| Authors: | DUAN Wenqian XU Ming WU Yannan DONG Chengjun DU Maolu |
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| Affiliation: | DUAN Wenqian1,XU Ming1,2,WU Yannan2,DONG Chengjun2,DU Maolu1(1.Key Lab.of Information Materials of Sichuan Province,School of Electrical and Information Engineering,Southwest University for Nationalities,Chengdu 610041,CHN,2.Institute of Solid State Physics,School of Physics and Electronic Engineering,Sichuan Normal University,Chengdu 610068,CHN) |
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| Abstract: | (Cu,Co)-codoped ZnO thin films,Zn0.95-xCo0.05CuxO(x=0,0.01,0.03,0.05) thin films were prepared by sol-gel method.The morphology and structure of the thin films were investigated using metallographic microscopy and X-ray diffraction(XRD).The results indicate that the doping does not change the crystal structure of ZnO,but affect the intensity and position of the diffraction peak.The photoluminescence(PL) spectra measured at room temperature show that the ultraviolet light and blue emittion accompanied by a w... |
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| Keywords: | sol-gel Zn0.95-xCo0.05CuxO thin films photoluminescence |
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