| 双台阶式埋氧SGOI自加热效应的数值研究 |
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| 引用本文： | 李斌,刘红侠,李劲,袁博,曹磊.双台阶式埋氧SGOI自加热效应的数值研究[J].半导体学报,2011,32(3):034001-7. |
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| 作者姓名： | 李斌 刘红侠 李劲 袁博 曹磊 |
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| 作者单位： | Laboratory;Wide;Band;Semiconductor;Materials;Devices;Education;School;Microelectronics;Xidian;University; |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005); the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083); the Specialized Research Fund for the Doctoral Program of Higher Education,China(No.200807010010) |
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| 摘 要： | To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator(SGOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs),this paper proposes a novel device called double step buried oxide(BOX) SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from...
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| 关 键 词： | 金属氧化物半导体场效应晶体管 自热效应 数值分析 MOSFET 电气参数 FET模型 短沟道效应 SiGe |
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide |
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| Li Bin,Liu Hongxi,Li Jin,Yuan Bo and Cao Lei.Numerical analysis of the self-heating effect in SGOI with a double step buried oxide[J].Chinese Journal of Semiconductors,2011,32(3):034001-7. |
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| Authors: | Li Bin Liu Hongxi Li Jin Yuan Bo and Cao Lei |
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| Affiliation: | Li Bin,Liu Hongxia,Li Jin,Yuan Bo,and Cao Lei Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education,School of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator(SGOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs),this paper proposes a novel device called double step buried oxide(BOX) SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from ph... |
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| Keywords: | self-heating effect step BOX SGOI mobility model numerical analysis |
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