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预退火气氛对BDT铁电薄膜性能的影响
引用本文:成传品,邓永和. 预退火气氛对BDT铁电薄膜性能的影响[J]. 微纳电子技术, 2011, 48(1): 37-39,57. DOI: 10.3969/j.issn.1671-4776.2011.01.007
作者姓名:成传品  邓永和
作者单位:湖南工程学院理学院,湖南,湘潭411104
基金项目:湖南省教育厅科研基金资助项目(08C229)
摘    要:介绍了溶胶-凝胶法制备掺Dy元素的Bi4Ti3O12(Bi3.4Dy0.6Ti3O12,BDT)薄膜的工艺过程,并研究了不同预退火气氛对沉积在Pt/Ti/SiO2/Si基片上的BDT薄膜铁电性能的影响。空气中的预退火,薄膜中的H,C等有机成分分解不彻底,有部分残留在薄膜中;而O2气氛下的预退火,由于O2充足,薄膜中的有机成分可以完全分解。退火过程中BDT薄膜晶粒的生长和取向可以受到残留的有机成分的影响,进而对BDT薄膜的铁电性有较为显著的影响。在外加400kV/cm的电场时,空气中预退火的BDT薄膜的剩余极化(2Pr)值和矫顽场(Ec)分别为26.37μC/cm2和114.2kV/cm,而O2气氛下预退火的BDT薄膜的2Pr和Ec分别为36.28μC/cm2和113.6kV/cm,表明O2气氛下预退火可显著提高BDT薄膜的剩余极化值,改善其铁电性能。

关 键 词:溶胶-凝胶  BDT薄膜  预退火  铁电性  有机

Effect of Pre-Annealing Atmosphere on Properties of BDT Ferroelectric Films
Cheng Chuanpin,Deng Yonghe. Effect of Pre-Annealing Atmosphere on Properties of BDT Ferroelectric Films[J]. Micronanoelectronic Technology, 2011, 48(1): 37-39,57. DOI: 10.3969/j.issn.1671-4776.2011.01.007
Authors:Cheng Chuanpin  Deng Yonghe
Affiliation:Cheng Chuanpin,Deng Yonghe (College of Science,Hunan Institute of Engineering,Xiangtan 411104,China)
Abstract:The sol-gel process of Dy-doped Bi4Ti3O12(Bi3.4Dy0.6Ti3O12,BDT) films was introduced.The effect of different pre-annealing atmospheres on the ferroelectricity of BDT films deposited on Pt/Ti/SiO2/Si substrates was investigated.The pyrolysis of organic components was incomplete during the pre-annealing process in air,hydrogen and carbon organic species as residues partly remained in the BDT film.However,after the film was pre-annealed in adequate O2,the organic components were pyrolysed completely and all th...
Keywords:sol-gel  BDT film  pre-annealing  ferro-electricity  organic  
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