Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution |
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| Authors: | Dumas J.M. Lecrosnier D. Paugam J. Vuchener C. |
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| Affiliation: | CNET, LAB/ICM, Lannion, France; |
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| Abstract: | A gradual degradation has been observed in the RF performance of GaAs power FETs. Electrical and physical analyses have been carried out, indicating the role played by the surface. A plasma enhanced chemical vapour deposited silicon nitride film is established as a suitable surface passivation. |
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