3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC |
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Authors: | Sei-Hyung Ryu Agarwal AK Singh R Palmour JW |
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Affiliation: | Cree Inc., Durham, NC; |
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Abstract: | A 2-mm×2-mm, 4H-SiC, asymmetrical npnp gate turn-off (GTO) thyristor with a blocking voltage of 3100 V and a forward current of 12 A is reported. This is the highest reported power handling capability of 37 kW for a single device in SiC. The 5-epilayer structure utilized a blocking layer that was 50 μm thick, p-type, doped at about 7-9×1014 cm-3. The devices were terminated with a single zone junction termination extension (JTE) region formed by ion-implantation of nitrogen at 650°C. The device was able to reliably turn-on and turn-off 20 A (500 A/cm2) of anode current with a turn-on gain (IK/IG, on) of 20 and a turn-off gain (IK/IG, off) of 3.3 |
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