Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors |
| |
Authors: | F. Mondon S. Blonkowski |
| |
Affiliation: | a CEA-DRT-LETI, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France;b J. Fourier University, BP53X, 38041, Grenoble Cedex 9, France;c STMicroelectronics, 850 rue Jean Monnet, 38926, Crolles Cedex, France |
| |
Abstract: | Current leakage and breakdown of MIM capacitors using HfO2 and Al2O3–HfO2 stacked layers were studied. Conduction in devices based upon HfO2 layers thinner than 8 nm is probably dominated by tunnelling. Al2O3–HfO2 stacked layers provide a limited benefit only in term of breakdown field. Constant-voltage wear-out of samples using insulating layer thicker than 6 nm is dominated by a very fast increase of the leakage current. A two step mechanism involving the generation of a conduction path followed by a destructive thermal effect is proposed to explain breakdown mechanism. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|