Copper metallization for crystalline Si solar cells |
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| Authors: | JaeSung You Jinmo Kang Donghwan Kim James Jungho Pak Choon Sik Kang |
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| Affiliation: | a School of Materials Science and Engineering, Seoul National University, Seoul, South Korea;b Division of Materials Science and Engineering, Korea University, Anam-Dong Sungbuk-Gu, Seoul 136-701, South Korea;c School of Electrical Engineering, Korea University, Seoul, South Korea |
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| Abstract: | Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and ISC, which was correlated with the series resistance (RS) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased RS. |
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| Keywords: | Cu metallization Si solar cells Diffusion barrier Ti TiN |
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