5–20 MeV proton irradiation effects on GaAs/Ge solar cells for space use |
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Authors: | Wang Rong Guo Zengliang Zhang Xinghui Zhai Zuoxu |
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Affiliation: | a Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center, Beijing 100875, China;b Tianjin Institute of Power Sources, Tianjin 300381, China |
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Abstract: | This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5–20 MeV at a fluence ranging from 1×109 to 7×1013 cm−2, and then their electric parameters were measured at AM0. It was shown that the Isc, Voc and Pmax degrade as the fluence increases, respectively, but the degradation rates of Isc, Voc and Pmax decrease as the proton energy increases, and the degradation is relative to proton irradiation-induced defect Ec−0.41 eV in irradiated GaAs/Ge cells. |
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Keywords: | GaAs/Ge solar cells High-energy proton Irradiation |
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