Low current plasma effect optical switch on InP |
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| Authors: | Muller G Stoll L Schulte-Roth G Wolff U |
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| Affiliation: | Siemens AG, Res. Lab. for Mater. Sci. & Electron., Muenchen, West Germany; |
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| Abstract: | Optical InP-GaInAsP directional coupler switches with a total length of 2 mm have been fabricated and operated by carrier injection. Switching is achieved at a very low injection current of 4 mA. For both switching states a crosstalk suppression exceeding 20 dB is obtained. In addition, the insertion loss estimated from the loss contributions of waveguides, bends and free carriers is as low as 1.3 dB.<> |
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