循环刻蚀工艺对金刚石膜形貌和电阻率的影响

为了制备新型金刚石薄膜辐射剂量计,针对目前金刚石薄膜质量较差,难于满足辐射剂量计要求的问题,采用微波等离子体CVD法,研究了循环刻蚀生长阶段工艺参数(甲烷浓度,基片温度)和刻蚀方法对薄膜形貌、电阻率的影响。结果表明,循环刻蚀生长有利于提高金刚石薄膜的纯度和取向性。当?(甲烷)为0.34%,基片温度为960℃时,可获得[100]晶面取向的、电阻率达1011Ω·cm的金刚石膜,和采用常规工艺所得金刚石薄膜相比,其电阻率提高了3个数量级。

Influence of the Cycle Etching Growth Parameters on the Morphologies and the Resistivity of Diamond Films

The aim of this study is to develop a new kind of radiation dosimeter based on diamond films. However up to now the diamond films, which have poor quality, do not meet the practical demands. The effect of cycle growth parameters (methane concentration, substrate temperature) and etching technique on the morphologies and the resistivity of diamond films were studied using MPCVD set-up. The results show that the purity and the resistivity of diamond films can be improved by the cycle etching growth. Higher oriented [100]and higher resistivity (3.9×1011) diamond films can be deposited under the condition of 960℃substrate temperature and methane concentration 0.34%. Compared with the general technique, the films resistivity can be increased by 3 orders of magnitude.