W掺杂量对非晶态TiO_2:W薄膜光学带隙的影响

在不同的W靶溅射功率下,用反应磁控溅射法在载玻片上制备了TiO2:W薄膜,并对样品进行了XRD,STS和UV-V is分析.结果表明试样为非晶态;W靶溅射功率为30 W时,带隙为2.75eV;W靶溅射功率为100 W时,带隙为3.02 eV;W靶溅射功率为150 W时,带隙能为2.92 eV.STS分析结果表明,在样品的禁带中产生了新的能级,能级宽度为0.83 eV.

Effects of W Dope on the Optical Band Gap of Amorphous TiO_2:W Thin Films

This paper obtains tungsten-doped titanium oxide thin films on slides with magnetron sputtering method under different W target sputtering powers and carries out XRD,STS AND UV-Vis analyses on the samples.Results show that the samples are amorphous and when the power of the W target is 30W,the optical band gap of the film is 2.75 eV,and when the power of W target is 100W and 150W,the optical band gap is 3.02 eV and 2.92 eV.The STS spectra analysis result shows that there is a new energy in the band gap of the film,whose width is 0.83eV.