SOI横向栅控双极晶体管特性研究

横向SOI双极技术具有工艺简单、寄生电容小等优势,被认为是射频领域最有希望的技术之一。为了得到可用于射频领域的SOI横向栅控双极晶体管特性,采用一种SOI横向栅控双极晶体管器件结构,研究范围包括工艺实现过程和器件性能特性。实验表明,该器件工艺与平面CMOS工艺完全兼容,通过对栅端电压的控制,可以实现hFE在一个较大的范围内自由调节,具有更大的使用灵活性。

Investigation into Gate-controlled Lateral Bipolar Transistors on SOI

Having advantages of simple process and small parasitic capacitance,lateral bipolar transistor on SOI is one of the most attractive technologies for RF applications.Process implementation and device characteristics of a lateral bipolar transistor were investigated.The experimental results indicate that the process is fully compatible with conventional CMOS technology and the hFE of the SOI gate-controlled lateral bipolar transistor is adjustable in a wide range by changing gate voltage.The device has greater flexibility in application.