Fe and Ti implants in In0.52Al0.48As |
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| Authors: | Jaime M Martin Ravi K Nadella Mulpuri V Rao David S Simons Peter H Chi C Caneau |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, George Mason University, 22030 Fairfax, VA;(2) National Institute of Standards and Technology, 20899 Gaithersburg, MD;(3) Bellcore, 07701-7040 Red Bank, NJ;(4) Present address: Departamento de Electricidad y Electronica, Facultad de Fisicas, Universidad Complutense, 28040 Madrid, Spain |
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| Abstract: | Single (200 keV) and multiple energy Fe implants in n-type and Ti implants in p-type material were performed in In0.52Al0.48As at both room temperature and 200°C. For the Fe implants, the secondary ion mass spectrometry profiles showed a severe out-diffusion
for all rapid thermal annealing schemes used, independent of the implantation temperature. The Fe implant peaks observed after
annealing, at 0.8Rp, Rp+ΔRp and 2Rp (where Rp and ΔRp are range and straggle, respectively) depth locations in other In-based
compounds like InP and InGaAs were not observed here. On the contrary, Ti implants showed only a slight in- and out-diffusion
for both room temperature and 200°C implants as in the case of InP and InGaAs. The Rutherford backscattering measurements
on the annealed samples implanted at 200°C showed a crystal quality similar to that of the virgin material. The resistivity
of all the samples after annealing was higher than 106 Ω-cm. |
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| Keywords: | Transition metals implantation compensation In0 52Al0 48As diffusion |
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