| SnO_2厚膜NO_2新型气敏元件的研制 |
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| 引用本文： | 林金阳.SnO_2厚膜NO_2新型气敏元件的研制[J].电子元件与材料,2008,27(1):48-50. |
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| 作者姓名： | 林金阳 |
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| 作者单位： | 福建工程学院,电子电气系,福建,福州,350014 |
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| 摘 要： | 根据霍耳效应,用真空镀膜法制备之SnO2厚膜,制备了NO2新型气敏元件,并对其气敏性能进行了测试。结果表明:在一定的温度和湿度下,即使没有加热,元件对体积分数为20×10–6的NO2气体的灵敏度可达5.94,响应时间为36 s,恢复时间为22 s。因此,利用霍耳效应来制作气敏元件是一条可行的新思路。
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| 关 键 词： | 电子技术 霍耳效应 气敏元件 二氧化氮 |
| 文章编号： | 1001-2028（2008）01-0048-03 |
| 收稿时间： | 2007-07-23 |
| 修稿时间： | 2007年7月23日 |
Preparation of a novel NO_2 gas sensor based on SnO_2 thick film |
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| LIN Jin-yang.Preparation of a novel NO_2 gas sensor based on SnO_2 thick film[J].Electronic Components & Materials,2008,27(1):48-50. |
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| Authors: | LIN Jin-yang |
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| Affiliation: | LIN Jin-yang(Fujian University of Technology,Fuzhou 350014,China) |
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| Abstract: | Based on the Hall effect a novel NO2 gas sensor was made,with SnO2 thick film obtained by vacuum-vapourization and its gas-sensing properties were measured.The results reveal that in a certain temperature and humidity,even in the absence of heating,a sensitivity of the sensor is about 5.94 when put it into 20×10–6 NO2 gas(volume fraction),response time is about 36 s and recovery time is about 22 s.This is a new thinking of preparing gas sensor by means of Hall effect. |
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| Keywords: | electron technology Hall effect gas sensor NO2 |
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