Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates |
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| Authors: | V V Mamutin A Yu Egorov N V Kryzhanovskaya V S Mikhrin A M Nadtochy E V Pirogov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) St. Petersburg Physics and Technology Center for Research and Education, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | Studies of the properties of InGaAsN compounds and methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures grown by molecular beam epitaxy on GaAs substrates are reviewed. The results for different types of heterostructures with quantum-size InGaAsN layers are presented. Among those are (1) traditional InGaAsN quantum wells in a GaAs matrix, (2) InAs quantum dots embedded in an (In)GaAsN layer, and (3) strain-compensated superlattices InAs/GaAsN/InGaAsN with quantum wells and quantum dots. The methods used in the study allow controllable variations in the emission wavelength over the telecommunication range from 1.3 to 1.76 μm at room temperature. |
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