Investigation of CdTex and Cd1-xZnxTe Schottky Barrier Diode Structure Based γ-Ray Detectors |
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Authors: | P. Veeramani M. Haris S. Moorthy Babu |
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Affiliation: | a Crystal Growth Center, Anna University, Chennai, India |
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Abstract: | Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) based detectors have been developed for hard X-ray and γ -ray detection. These semiconducting materials have high resistivity because of the wide bandgap and also have high photon absorption efficiency because of the large atomic number (ZCd = 48, ZTe = 52). CdTe and CdZnTe substrates (7 mm × 9 mm × 0.5 mm) with different stoichiometry were taken for the fabrication of γ-ray detectors. The substrate was prepared by polishing the bulk crystals grown by the rotational Bridgman method. Crystals with maximum electrical resistivity were grown in this way. For fabrication of Schottky barrier diode structures, the Schottky contacts were made by electroless deposition for gold (Au) and thermal evaporation for Indium (In). The Au/CdTe/In and Au/CdZnTe/In Schottky barrier diodes were linked to the charge sensitive preamplifier by gold wires. Then, I-V measurement and detector efficiency like charge collection performance with energy resolutions were analyzed at room temperature by using 57Co and 137Cs gamma sources. The good energy resolutions of 57Co (122 KeV) and 137Cs (662 KeV) sources are obtained for both CdTe and CdZnTe diode detectors. |
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Keywords: | CdTe CdZnTe I-V Characteristics γ-Ray detector Schottky barrier diode |
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