Growth and properties of ZnO nanowires synthesized by a simple hydrothermal method |
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Authors: | Shr-Nan Bai |
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Affiliation: | (1) Department of Electronic Engineering and Institute of Electronic, Chienkuo Technology University, Changhua City, 500, Taiwan, ROC |
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Abstract: | Hexagonal ZnO nanowires were synthesized on pre-seeded silicon (100) substrates by a simple hydrothermal method at a relatively
low temperature of 95 °C without any catalyst or template. The pre-seeded layer was produced using the sol–gel spin coating
technique with 1 M zinc acetate in ethanol and ethanolamine. The structural properties of the nanowires were characterized
by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD pattern indicated that the as-grown ZnO nanowires
had the single-phase wurtzite structure, formed along the c-axis. SEM revealed that the nanostructure thin film had wire textures
and the synthesis processes importantly influence the final size and shape of the ZnO nanowires. High-resolution transmission
electron microscopy (HRTEM) provided further insight into the structure of ZnO nanostructures. The obtained HRTEM image was
of the tip of an individual nanowire. The ZnO nanowires highly preferentially grew in the (002) crystal plane. The lattice
spacing between adjacent (002) lattice planes was calculated to be 0.52 nm. The optical characteristics of the nanowires were
determined from cathodoluminescence (CL) spectra. The CL revealed a fairly high surface state density of ZnO nanowires that
grew at reaction concentrations of 0.01–0.25 M. |
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