GaAs PIN electro-optic travelling-wave modulator at 1.3 ?m |
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| Authors: | Lin SH Wang SY Houng YM |
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| Affiliation: | Hewlett-Packard Laboratories, Palo Alto, USA; |
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| Abstract: | A GaAs PIN travelling-wave modulator operated at 1.3 ?m has been fabricated from material grown by organometallic vapour phase epitaxy (OMVPE) on an n+ (100) GaAs substrate. The device has a constant V? of 8 V from DC to 10 GHz and an optical extinction ratio of 13 dB. The optical insertion loss of the device is 3.5 dB, and the 3 dB frequency bandwidth is measured to be 4.1 GHz, which is limited by the microwave slowing induced by the n+ substrate. |
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