2.1 A/mm current density AlGaN/GaN HEMT |
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| Authors: | Chini A Coffie R Meneghesso G Zanoni E Buttari D Heikman S Keller S Mishra UK |
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| Affiliation: | Dept. of Inf. Eng. & INFM, Univ. of Padova, Italy; |
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| Abstract: | The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 /spl times/ 75 /spl mu/m /spl times/ 0.7 /spl mu/m devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and V/sub DS/=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE. |
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