Numerical calculations of field enhancement and field amplification factors for a vertical carbon nanotube in parallel-plate geometry |
| |
Authors: | Wei Zeng Guojia Fang Nishuang Liu Longyan Yuan Xiaoxia Yang Shishang Guo Dianyuan Wang Zhiqiang Liu Xingzhong Zhao |
| |
Affiliation: | aKey Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430072, PR China;bCollege of Science, Jiujiang University, Jiujiang, 332005, PR China;cState Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing, 100080, PR China |
| |
Abstract: | Three types of models, with various emitter shapes in planar electrodes, have been employed to investigate field electron emission characteristics by finite element method. With the model of “hemisphere on a post”, two definitions of field enhancement and field amplification factors and their relation have been discussed systemically at different anode locations. The field distribution in the gap, between emitter apex and anode, is quantified by a field saturation factor. Simulation indicates that field distribution is an important aspect for explaining the nonlinear variation of field amplification factor at different anode locations. Furthermore, the field saturation factor can reflect the saturation degree of field amplification factor. The findings can be used not only in the model of “hemisphere on a post” but also approximately in the models of “two-stage hemisphere on a post” and “hemi-ellipsoid on plane”. Therefore, the fact can be approximately applied to every protruding shape of emitter that is supposed. Comparisons with previously reported experimental and theoretical results are also given. |
| |
Keywords: | Field electron emission Computer simulation Electric field distribution Field enhancement factor |
本文献已被 ScienceDirect 等数据库收录! |
|