| MBE生长的Al_xGa_(1-x)As合金的光学分析(英文) |
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| 引用本文： | 劳浦东,W.C.Tang A.Madhukar. MBE生长的Al_xGa_(1-x)As合金的光学分析(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 劳浦东 W.C.Tang A.Madhukar |
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| 作者单位： | 复旦大学物理系(劳浦东),美国南方加利福尼亚大学材料科学系(W.C.Tang A.Madhukar) |
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| 摘 要： |
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Optical Characterization of Al_xGa_(1-x) As Alloy Grown by MBE |
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| Abstract: | Presented here are a combined Rayleigh, Raman and photolumines-cence studies of AlxGa1-xAs alloy grown by molecular-beam-epitaxy. The Rayleigh intensity is found to be sensitive to the degree of disorder in the alloy. The appearance of "forbidden" TO mode in Raman spectra is likely due to twinning effects inducing internal microscopic misorientation. All LO phonons, around X and L points, contribute to the phonon-assisted exciton recombination process examined in photoluminescence spectra. Also shown in the paper is the discrepancy between the results of existing methods to determine alloy concentration from Raman and photoluminescence data. |
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