高浓度硼深扩散自停止腐蚀层硅片工艺研究

为制备用于硅溶片工艺的高浓度硼深扩散自停止腐蚀层硅片,对扩散掺杂工艺进行了研究。结合预淀积和再分布两种条件下扩散的特点,采用两步法工艺制备了高浓度硼深扩散硅片,研究了影响杂质浓度和扩散深度的再分布与预淀积时间比。扩散所得硅片的测试结果与理论计算相当吻合,当再分布与预淀积时间比为1.5倍时,扩散结深为21.7μm,自停止腐蚀层为14μm。

Research on deep boron diffusion etch-stop layer silicon wafer process

The diffusion was researched through analyzing characteristics of the pre-deposition process and the drive-in process. And two-steps process was applied in order to fabricate the deep boron diffusion etch-stop layer,the etch-stop layer can be obtained with this process. The ratio of drive-in and pre-deposition time was explored because the concentration and depth of etch-stop layer were affected by it,the optimal parameters were achieved in the experiments. Wafers were measured in the laboratory,obtained results are identical with the theories,the junction depth is 21.7 μm and the etch-stop layer is 14 μm when the ratio of drive-in and pre-deposition time is 1.5:1.