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| 离子注入SOI薄膜材料的制备及性能 | |
| 引用本文： | 卢殿通,黄栋,Heiner Ryssel,Hemment P L F. 离子注入SOI薄膜材料的制备及性能[J]. 核技术, 2000, 23(10): 697-702 |
| 作者姓名： | 卢殿通 黄栋 Heiner Ryssel Hemment P L F |
| 作者单位： | 1. 北京师范大学低能核物理研究所，北京市辐射中心 北京100875 2. Fraungofer-Arbeitsgruppe fur Integrierte Schaitungem Abteilung furBauelementetechnologie, D-8520 Erlangen, Germany 3. Department of Electronic and Electrical Engineering, University of Surrey,Guilford, Surey GU2 5XH, UK. |
| 基金项目： | 国家自然科学基金!（69776006），北京市自然科学基金!（4952002）资助 |
| 摘 要： | ＳＯＩ－ＣＭＯＳ电路具有高速度、低功能、抗辐照等优点。用氧、氮离子注入硅中，得到性能良好的ＳＩＭＯＸ和ＳＩＭＮＩ薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了ＳＯＩ材料表面界面的电学性能。并对各种方法进行了讨论。结果显示，用分步注入和分步退火制备的ＳＯＩ材料大大地改善了材料的电学性能。 |
| 关 键 词： | 离子注入 电学性能 SOI薄膜材料 制备 |
Formation of SOI films by ion implantation into Si and their propertie |
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| sLU Diantong,HUANG Dong,Heiner Ryssel,Hemment P L F. Formation of SOI films by ion implantation into Si and their propertie[J]. Nuclear Techniques, 2000, 23(10): 697-702 | |
| Authors: | sLU Diantong HUANG Dong Heiner Ryssel Hemment P L F |
| Abstract: | The SOI (silicon-on-insulator) technology was regarded as a very important technique of the silicon-integrated circuit in the 21 century. The SIMOX (separation by implanted oxygen) and SIMNI (separation by implanted nitrogen) films were formed by O or N ion implantation into silicon with several methods. The SR (spreading resistance), Hall effects and DLTS (deep-level transient spectroscopy) measurements were used to analyse the surface electrical properties of the SOI structures. The results show that the step-implanted SOI films have good electrical properties. |
| Keywords: | Ion implantation SOI materials Electyical properties |
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