三段式F-P半导体激光器的光谱特性分析 |
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引用本文: | 王甦,陈建国,李大义.三段式F-P半导体激光器的光谱特性分析[J].激光技术,2001,25(3):174-177. |
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作者姓名: | 王甦 陈建国 李大义 |
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作者单位: | 1.西南技术物理研究所, 成都, 610041; |
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摘 要: | 通过微加工法可以在FP半导体激光器中引入具有反射功能的缺欠点或面来改进激光器的光谱特性。利用射线法,推导了含有两个缺欠点的微加工获得的FP半导体激光器的输出谱表达式,并根据平均载流子密度近似(MCA)计算出名义阈值载流子密度Nth与实际载流子密度N之差ΔN,从而对模式抑制比(MSR)可作计算分析。
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关 键 词: | 三段式FP半导体激光器 输出光谱 模式抑制比(MSR) |
收稿时间: | 2000-03-10 |
修稿时间: | 2000年3月10日 |
Analysis of the output spectrum of three-section Fabry-Perot semiconductor lasers |
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Abstract: | Micro machined defects can be introduced into a semiconductor laser to improve spectral characteristics of the F-P laser.Based on ray trace method, an expression of the output spectrum from a micro machined F-P semiconductor laser including two defects has been deduced.With the aid of the expression,the difference ΔN between the nominal threshold carrier density Nth and actual carrier density N of the laser can be determined, and the side mode suppression can be specified. |
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Keywords: | three section F P semiconductor laser output spectrum mode suppression ratio(MSR) |
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