| 氢化非晶硅中光致亚稳性退化的物理机制 |
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| 引用本文： | 秦国刚,孔光临. 氢化非晶硅中光致亚稳性退化的物理机制[J]. 半导体学报, 1988, 9(1): 103-108 |
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| 作者姓名： | 秦国刚 孔光临 |
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| 作者单位： | 北京大学物理系 北京(秦国刚)，中国科学院半导体研究所 北京(孔光临) |
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| 摘 要： | 关于氢化非晶硅(a-Si:H)中光致亚稳性退化(Staebler-Wronski效应)虽已进行了大量研究,但对其物理机制至今还是不清楚的,已有物理模型都有它自己的困难.本文指出,光激产生的导带电子与价带空穴通过Si-H弱键的无辐射复合时放出的Si-H 局域模振动声子使Si-H键自身断裂而造成硅悬挂键——SW缺陷.该模型可以定性解释我们所知道的重要实验事实.
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| 关 键 词： | 氢化非晶硅 Staebier-Wronski效应 |
Physical Mechanism of the Photoinducod Dogradatio in a-Si:H Films |
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| Qin Guogang/. Physical Mechanism of the Photoinducod Dogradatio in a-Si:H Films[J]. Chinese Journal of Semiconductors, 1988, 9(1): 103-108 |
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| Authors: | Qin Guogang/ |
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| Affiliation: | Qin Guogang/Department of Physics,Beijing University,BeijingKong Guanglin/Institute of Semiconductors,Academia Sinica,Beijing |
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| Abstract: | A new model for the formation of metastable Staebler-Wronski defects in a-Si:H has beenproposed.The phonons of local Si-H vibrational mode released in the nonradiative recom-bination of photoexcited electrons and holes through weak Si-H bonds may break the Si-Hbonds themselves and result in an increase in Si dangling bonds-SW defects.The modelprovides a reasonable qualitative explanation to all the important experimental results relatedto the phenomenon. |
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| Keywords: | a-Si:H Staebler-Wronski effect |
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