| 应变Si/(111)Si1-xGex带边能级计算 |
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| 引用本文： | 宋建军,张鹤鸣,胡辉勇,戴显英,宣荣喜.应变Si/(111)Si1-xGex带边能级计算[J].半导体学报,2010,31(1):012001-3. |
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| 作者姓名： | 宋建军 张鹤鸣 胡辉勇 戴显英 宣荣喜 |
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| 作者单位： | Laboratory;Wide;Band-Gap;Semiconductor;Materials;Devices;School;Microelectronics;Xidian;University; |
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| 基金项目： | supported by the Foundation from the National Ministries and Commissions(Nos.51308040203,6139801). |
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| 摘 要： | 采用结合形变势理论的k.p微扰法计算了（111）面弛豫Si1-xGex衬底生长双轴应变Si材料的带边能级。结果表明，应变Si/(111)Si1-xGex材料导带简并度与弛豫Si材料相同，价带带边简并度在应力的作用下部分消除，导带和价带带边能级均随着Ge组份（x）的增加而增加。此外，本文还给出了禁带宽度、价带劈裂能随Ge组份（x）的函数关系。以上量化结论可为Si基应变器件设计提供有价值的参考。
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| 关 键 词： | 水平移动 计算 应变硅 势理论 微扰法 优势 VB 合金 |
| 修稿时间： | 9/3/2009 10:49:57 AM |
Calculation of band edge levels of strained Si/(111)Si1-xGex |
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| Song Jianjun,Zhang Heming,Hu Huiyong,Dai Xianying and Xuan Rongxi.Calculation of band edge levels of strained Si/(111)Si1-xGex[J].Chinese Journal of Semiconductors,2010,31(1):012001-3. |
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| Authors: | Song Jianjun Zhang Heming Hu Huiyong Dai Xianying and Xuan Rongxi |
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| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi'an 710071, China |
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| Abstract: | Calculations were performed on the band edge levels of (111)-biaxially strained Si on relaxed Si1-xGex alloy using the k·p perturbationmethod coupled with deformation potential theory. The results show that the conduction band (CB) edge is characterized by six identicalvalleys, that the valence band (VB) edge degeneracies are partially lifted, and that both the CB and VB edge levels move up in electron energy as the Ge fraction (x) increases. In addition, the dependence of the indirect bandgap and the VB edge splitting energy on x was obtained. Quantitative data from the results supply valuable references for Si-based strained device design. |
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| Keywords: | strained Si band edge k-p method |
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