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| 半导体单晶材料的表面光伏效应 | |
| 引用本文： | 沈(岂页)华. 半导体单晶材料的表面光伏效应[J]. 固体电子学研究与进展, 1985, 0(4) |
| 作者姓名： | 沈(岂页)华 |
| 作者单位： | 厦门大学 |
| 基金项目： | 中国科学院科学基金资助课题 |
| 摘 要： | 本文报导了测量半导体单晶材料(Si、GaAs、GaP、InP)的表面光伏谱和少子扩散长度,以及用微型计算机进行曲线拟合计算出材料的掺杂浓度、载流子迁移率、表面势垒宽度和表面势垒边界的界面复合速度等参数;得到的掺杂浓度与霍尔方法的测量值做了对比;本文还讨论了曲线拟合计算结果的可靠性和准确性. |
Surface Photovoltaic Effect of Single Crystal Semiconductor Materials |
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| Abstract: | Tha surface photovoltaic spectra and minority carrier diffusion lengths of single crystal semiconductor materials (Si, GaAs, GaP, InP) are measured. Material parameters, such as doping level, carrier mobility, width of surface barrier and interface recombination velocity of the surface barrier, etc. are calculated by curve fitting method with a microcomputer. The doping levels calculated by curve fitting method are compared with the meacnred valuesby Hall method. The accuracy of the calcula-ons is discussed, |
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