铜屏蔽层绕制方式对绝缘管母安全运行影响的研究

为了研究铜屏蔽层绕制方式对绝缘管母运行安全的影响,针对某地区110k V变电站35k V侧绝缘管母出现的外护套烧蚀击穿故障案例进行了研究。通过管母烧蚀击穿点的红外热成像,结合管母的有限元仿真对管母铜屏蔽层在绕包和叠包绕制方式下管母半导电层的电势分布、电流密度以及阻性损耗密度进行了对比分析。研究结果表明:两种绕制方式下管母的半导电层电势分布、电流密度及阻性损耗存在明显差异。管母采用绕包时在铜屏蔽层截断处容易形成局部高电势,半导电层表面电流及局部阻性发热功率密度大,半导电层发热严重并存在明显的过热点;采用叠包时管母半导电层的表面电势、电流密度及局部阻性发热功率接近于零,未发现明显的局部过热点。这些特征可为改进管母铜屏蔽层的绕制方式和指导实际生产工作提供理论依据。

Research on Copper Shield Wingding Manner to the Influence of Pipe Type Busbar Safety Operation

In order to investigate the influence of copper shield winding manner on the safety operation of pipe type In order to investigate the influence of copper shield winding manner on the safety operation of pipe typebusbar, this paper focused on 35kV AC sides of the busbar insulation burned down case in a 110kV substation.Accordingto the imaging of the breakdown point, the finite element simulation of the busbar was used to analyze the po -tential distribution of the semiconducting layer , current density and resistance loss density under copper shield wrapped and stacked way.The results show that the potential distribution , current density and resistance loss density are significantly different.The potential in the copper shield is high, and the current and resistance heating power density of semiconducting layer surface are large, there exist an obvious hot point when the copper shied is wrapped .The potential, surface current and resistance heating power density of the semiconducting layer are close to zero , and there is no obvious hot point when the copper shied is stacked .These features may improve the wingding way of the copper shield and provide a theoretical basis for the actual production work .