一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究

传统沟槽型4H-SiC IGBT中关断损耗较大,导通压降和关断损耗难以折中。针对此问题,文中提出了发射极区域含有低寿命区,同时集电区引入阶梯型集电极的LS-IGBT结构来降低器件的关断损耗。通过同时控制集电区注入的空穴载流子数量和P基区载流子的寿命,在基本维持器件击穿电压的前提下降低器件的关断损耗。使用Silvaco Atlas器件仿真工具对改进结构进行特性仿真分析,并与传统结构进行对比。仿真结果显示,在击穿电压一致的前提下,新结构的关断损耗提升了84.5 %,同时器件的导通压降降低了8.3 %,证明了设计思想的正确性。

Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region

The traditional trench type 4H-SiC IGBT has a large turn-off loss, and it is difficult to compromise the turn-on voltage drop and turn-off loss. Aiming at this problem, a LS-IGBT structure was proposed, in which the emitter region contained a low-life region while a stepped collector was introduced by collector region to reduce the turn-off loss of the device. This method reduced the turn-off loss of a device by simultaneously controlling the number of hole carriers injected in the collector region and the lifetime of the P base region carriers, while maintaining the device breakdown voltage. The Silvaco Atlas device simulation tool was used to simulate the improved structure and compare it with the traditional structure. The simulation results showed that under the premise of consistent breakdown voltage, the turn-off loss of the new structure was increased by 84.5 % compared with the conventional structure, and the turn-on voltage drop of the device was reduced by 8.3%, which verified the correctness of the design.