| 铝阳极氧化基板制备过程对埋置型Ta-N薄膜电阻的影响 |
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| 引用本文： | 朱大鹏,罗乐.铝阳极氧化基板制备过程对埋置型Ta-N薄膜电阻的影响[J].半导体学报,2008,29(4):774-779. |
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| 作者姓名： | 朱大鹏 罗乐 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050;中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 摘 要： | 在铝阳极氧化多层基板内用RF反应溅射制备了埋置型Ta-N薄膜电阻,研究了铝阳极氧化过程对Ta-N薄膜电阻和显微结构的影响.实验结果表明:Ta-N薄膜受上层多孔氧化铝膜影响在表层形成了由Ta2O5和Ta-O-N组成的氧化物凸起绝缘层,氧化物凸起层厚度与氧化电压有关.底层Ta-N薄膜电阻率和电阻温度系数基本保持不变,表层氧化凸起使电阻稳定性增加.
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| 关 键 词： | 阳极氧化 Ta-N薄膜电阻 电学性能 显微结构 |
| 文章编号： | 0253-4177(2008)04-0774-06 |
| 收稿时间： | 7/10/2007 7:56:24 PM |
| 修稿时间： | 12/3/2007 3:33:08 PM |
Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor |
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| Zhu Dapeng and Luo Le.Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor[J].Chinese Journal of Semiconductors,2008,29(4):774-779. |
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| Authors: | Zhu Dapeng and Luo Le |
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| Affiliation: | Shanghai Institute of Microsystems and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Shanghai Institute of Microsystems and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | A Ta-N thin film resistor was integrated in anodic alumina MCM-D substrate using RF reactive sputtering.The effects of the aluminum anodization process on the microstructure of the Ta-N resistor were studied.The results show that the oxide bulges composed of Ta2O5 and Ta-O-N were formed at the surface of Ta-N film due to the effect of the upper layer of porous anodic alumina.The oxide bulge thickness was related to the anodiztion voltage.The resistivity and TCR of the remaining Ta-N resistor remained unchanged.The resistor was more stable because of the protection of the oxide bulges. |
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| Keywords: | anodization Ta-N thin film resistor electrical property microstructure |
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